The idea of manufacturing such substrates is the possibility of research and application of nanomaterials and composites that have poor electrical conductivity, but due to
Graphene-based materials are among most promising for implementing novel optoelectronic devices by means of direct lithography. Changing of a laser power we can produce both
Formation of Ge-Sn alloy with high Sn content for obtaining direct bandgap Ge1-xSnx films are very promising way of achieving IR detectors and emitters compatible
In cooperation with the Institute for Information Recording of National Academy of Sciences of Ukraine (this cooperation was established as a part of fulfilling the
Result: From AFM-data established an increase in hardness from 0.9 GPa in an amorphous single layer to 11–18 GPa in polycrystalline thick (~0.5 μm) films
Nano-grid formed on the GeSn film using EFSPL, along with Scanning Capacitance Microscopy (SCM) images of the nano-grid under different DC bias voltages applied to
The idea – to create in the top layer masks with nm-resolution (1),which can be used to optically expose patterns in the bottom layer (2).
We propose to increase the sensitivity of the (sub)THz radiation detector using an antenna that will focus electromagnetic energy into the active layers of the