{"id":349,"date":"2025-11-18T15:28:41","date_gmt":"2025-11-18T15:28:41","guid":{"rendered":"https:\/\/laserlithography.science\/?p=349"},"modified":"2025-11-18T15:28:43","modified_gmt":"2025-11-18T15:28:43","slug":"locallaser-inducedcrystallization","status":"publish","type":"post","link":"https:\/\/laserlithography.science\/?p=349&lang=en","title":{"rendered":"Locallaser-inducedcrystallization"},"content":{"rendered":"\n<h2 class=\"wp-block-heading\">Formation of Ge-Sn alloy with high Sn content for obtaining direct bandgap<\/h2>\n\n\n\n<p>Ge<sub>1-x<\/sub>Sn<sub>x<\/sub> films are very promising way of achieving IR detectors and emitters compatible with Si and CMOS technology. The major obstacle is low solubility of Sn in Ge. In this work we used laser engraver to obtain crystalline Ge<sub>1-x<\/sub>Sn<sub>x<\/sub> films by local annealing the amorphous Ge\/Sn multilayer. Optionally, carbon implantation into the film before annealing was used, with the aim to reduce local strain in the alloy and preclude Sn (and Ge) segregation.<\/p>\n\n\n\n<figure class=\"wp-block-image size-full\"><img fetchpriority=\"high\" decoding=\"async\" width=\"306\" height=\"173\" src=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture7.png\" alt=\"\" class=\"wp-image-272\" srcset=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture7.png 306w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture7-300x170.png 300w\" sizes=\"(max-width: 306px) 100vw, 306px\" \/><\/figure>\n\n\n\n<figure class=\"wp-block-image size-large\"><img decoding=\"async\" width=\"1024\" height=\"456\" src=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/\u0420\u0438\u0441\u0443\u043d\u043e\u043a123-1024x456.png\" alt=\"\" class=\"wp-image-350\" srcset=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/\u0420\u0438\u0441\u0443\u043d\u043e\u043a123-1024x456.png 1024w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/\u0420\u0438\u0441\u0443\u043d\u043e\u043a123-300x134.png 300w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/\u0420\u0438\u0441\u0443\u043d\u043e\u043a123-768x342.png 768w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/\u0420\u0438\u0441\u0443\u043d\u043e\u043a123.png 1098w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading has-text-align-center\">Si-based structures<\/h2>\n\n\n\n<p>This research aims to develop devices based on silicon-on-insulator (SOI) technology, which requires, in particular, the formation of a (poly)crystalline silicon layer and a SiO<sub>2<\/sub> layer on a monocrystalline silicon wafer.<\/p>\n\n\n\n<figure class=\"wp-block-image size-full\"><img decoding=\"async\" width=\"625\" height=\"248\" src=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture9.png\" alt=\"\" class=\"wp-image-276\" srcset=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture9.png 625w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture9-300x119.png 300w\" sizes=\"(max-width: 625px) 100vw, 625px\" \/><\/figure>\n\n\n\n<p>Raman spectrum from the (light) region of the original amorphous silicon (green curve) and the spectrum of the (dark) region crystallized by a scanning laser engraver (red curve).<\/p>\n\n\n\n<figure class=\"wp-block-image size-full\"><img loading=\"lazy\" decoding=\"async\" width=\"338\" height=\"250\" src=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture10.png\" alt=\"\" class=\"wp-image-277\" srcset=\"https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture10.png 338w, https:\/\/laserlithography.science\/wp-content\/uploads\/2025\/11\/Picture10-300x222.png 300w\" sizes=\"(max-width: 338px) 100vw, 338px\" \/><\/figure>\n","protected":false},"excerpt":{"rendered":"<p>Formation of Ge-Sn alloy with high Sn content for obtaining direct bandgap Ge1-xSnx films are very promising way of achieving IR detectors and emitters compatible with Si and CMOS technology. The major obstacle is low solubility of Sn in Ge. In this work we used laser engraver to obtain crystalline Ge1-xSnx films by local annealing [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":272,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[10],"tags":[],"class_list":["post-349","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category---en"],"_links":{"self":[{"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/posts\/349","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/laserlithography.science\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=349"}],"version-history":[{"count":1,"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/posts\/349\/revisions"}],"predecessor-version":[{"id":351,"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/posts\/349\/revisions\/351"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/laserlithography.science\/index.php?rest_route=\/wp\/v2\/media\/272"}],"wp:attachment":[{"href":"https:\/\/laserlithography.science\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=349"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/laserlithography.science\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=349"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/laserlithography.science\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=349"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}